Spherical shaped semiconductor integrated circuit

ABSTRACT

A spherical shaped semiconductor integrated circuit (“ball”) and a system and method for manufacturing same. The ball replaces the function of the flat, conventional chip. The physical dimensions of the ball allow it to adapt to many different manufacturing processes which otherwise could not be used. Furthermore, the assembly and mounting of the ball may facilitates efficient use of the semiconductor as well as circuit board space.

CROSS REFERENCE

This is a divisional of application Ser. No. 09/265,235, Mar. 8, 1999,now U.S. Pat. No. 6,203,650, issued Mar. 21, 2001 which is a divisionalof application Ser. No. 09/086,872, filed May 29, 1998, now U.S. Pat.No. 6,004,396, issued Dec. 21, 1999 which is a divisional of applicationSer. No. 08/858,004, filed May 16, 1997, now U.S. Pat. No. 5,955,776,issued Sept. 21, 1999 which claims priority from provisional applicationSer. No. 60/032,340, filed Dec. 4, 1996, now abandoned.

BACKGROUND OF THE INVENTION

The invention relates generally to semiconductor integrated circuits,and more particularly, to a spherical shaped semiconductor integratedcircuit and a system and method for manufacturing same.

Conventional integrated circuits, or “chips”, are formed from a flatsurface semiconductor wafer. The semiconductor wafer is firstmanufactured in a semiconductor material manufacturing facility and isthen provided to a fabrication facility, or “fab.” At the fab, severallayers are processed onto the semiconductor wafer surface. Oncecompleted, the wafer is then cut into one or more chips and assembledinto packages. Although the processed chip includes several layersfabricated thereon, the chip still remains relatively flat.

To own and operate a modern wafer manufacturing facility, fab, andassembly facility, tremendous resources must be assembled. For example,a single fab typically cost several billion dollars, and thereforerequires a great deal of capital and commitment. This high level ofcapital and commitment is compounded by many problems inherent to bothchips and fabs.

Many of these problems reflect on the enormous effort and expenserequired for creating silicon wafers and chips. For example,manufacturing the wafers requires creating rod-form polycrystallinesemiconductor material; precisely cutting ingots from the semiconductorrods; cleaning and drying the cut ingots; manufacturing a large singlecrystal from the ingots by melting them in a quartz crucible; grinding,etching, and cleaning the sure of the crystal; cutting, lapping andpolishing wafers from the crystal; and heat processing the wafers.Moreover, the wafers produced by the above process typically have manydefects. These defects can be attributed to the difficulty in making asingle, highly pure crystal due to the cutting, grinding and cleaningprocesses as well as impurities associated with containers used informing the crystals. For example, oxygen is a pronounced impurityassociated with the quartz crucible. These defects become more and moreprevalent as the integrated circuits formed on these wafers containsmaller and smaller dimensions.

A problem associated with modern fabs is that they require manydifferent large and expensive facilities. For example, fabs requiredust-free clean rooms and temperature-controlled manufacturing andstorage areas to prevent the wafers and chips from defecting andwarping. The amount of dust in the clean rooms is directly proportionalto the end quality of the chips. Also, warping is especially problematicduring heat treatment processes.

Other problems associated with modern fabs result from their inherentlyinefficient throughput as well as their inefficient use of silicon. Forexample, modern fabs using in-batch manufacturing, where the wafers areprocessed by lots, must maintain huge inventories to efficiently utilizeall the equipment of the fab. Also, because the wafers are round, andcompleted chips are rectangular, the peripheral portion of each wafercannot be used.

Still another problem associated with modern fabs is that they do notproduce chips that are ready to use. Instead, there are many additionalsteps that must be completed, including: cutting and separating the chipfrom the wafer, assembling the chip to a lead frame which includes wirebonding, plastic or ceramic molding and cutting and forming the leads,positioning the assembled chip onto a printed circuit board; andmounting the assembled chip to the printed circuit board. The cuttingand assembly steps introduce many errors and defects due to the preciserequirements of such operations. In addition, the positioning andmounting steps are naturally two-dimensional in character, and thereforedo not support curved or three dimensional areas.

Therefore, due to these and various other problems, only a few companiesin the world today can successfully manufacture conventional chips.Furthermore, the chips must bear a high price to cover the costs ofmanufacturing, as well as the return on initial capital and investment.

SUMMARY OF THE INVENTION

The present invention, accordingly, provides a spherical shapedsemiconductor integrated circuit and a system and method formanufacturing same. The spherical shaped semiconductor integratedcircuit, hereinafter “ball”, replaces the function of the flat,conventional chip. The physical dimensions of the ball allow it to adaptto many different manufacturing processes which otherwise could not beused. Furthermore, the assembly and mounting of the ball facilitatesefficient use of semiconductor material as well as circuit board space.

An advantage achieved with the present invention is that it supportssemiconductor processing using wafting in a vacuum, gas or liquid. Suchwafting may be in a vertical, horizontal or diagonal direction.

Another advantage achieved with the present invention is that itsupports semiconductor processing while the ball is moving through apipe, tube, or container. Such movement may be in a vertical, horizontalor diagonal direction. Furthermore, the pipe or tube can be continuous,thereby reducing or eliminating the need for a clean room environment.

Another advantage achieved with the present invention is that itsupports semiconductor processing at ultra-high temperatures, includingsuch temperatures at or above conventional semiconductor materialwarping or melting points.

Another advantage achieved with the present invention is that itfacilitates crystal formation in that a spherical crystal is naturallyformed by its own surface tension.

Another advantage achieved with the present invention is that thespherical shape of the ball provides much greater surface area on whichto inscribe the circuit.

Another advantage achieved. with the present invention is that thespherical shape of the ball withstands external forces better than theconventional chip. As a result, conventional assembly packaging is notalways required with the ball.

Another advantage achieved with the present invention is that thespherical shape of the ball allows one ball to be connected directly toa circuit board or clustered with another ball. Such clustering enablesthree-dimensional multi-active layers and multi-metal layers in anydirection.

Another advantage achieved with the present invention is that it allowsa single, relatively small facility to manufacture the semiconductormaterial as well as perform the fabrication. Furthermore, therequirements for assembly and packaging facilities are eliminated.

Another advantage achieved with the present invention is that it reducesmanufacture cycle time.

Another advantage achieved with the present invention is that a singlefabrication structure can be commonly used for many different processingsteps.

Other advantages, too numerous to mention, will be well appreciated bythose skilled in the art of semiconductor fabrication.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 provides a flow chart for making and using a spherical shapedsemiconductor integrated circuit embodying features of the presentinvention.

FIG. 2 illustrates a return-type fluid bed repetitive reactor formanufacturing granular semiconductor polycrystal.

FIG. 3 illustrates a descending-type wafting treatment device used as agranular single crystal furnace for processing the polycrystal of FIG.2.

FIG. 4 illustrates a spherical surface polishing system for polishing aspherical semiconductor single crystal.

FIG. 5A illustrates a floating-type treatment device for processing thecrystal of FIG. 4.

FIG. 5B provides a close-up view of part of the floating-type treatmentdevice of FIG. 5A FIG.

FIG. 6 illustrates a movement-type treatment device for processing thecrystal of FIG. 4.

FIG. 7 illustrates a descending-type treatment device for processing theball.

FIG. 8 illustrates an ascending-type treatment device for processing theball.

FIG. 9 illustrates a descending-type wafting treatment device used as adiffusion furnace for processing the ball.

FIG. 10 is a descending-type treatment device with electrodes forprocessing the ball.

FIG. 11 is a descending-type treatment device with coating sprayers forprocessing the ball.

FIG. 12 is a descending-type treatment device with gas sprayers forprocessing the ball.

FIG. 13 illustrates a spherical surface mask for use in photo exposureprocessing.

FIG. 14 illustrates a spherical slit drum for use in photo exposureprocessing.

FIG. 15 illustrates a fixed-type photo exposure system.

FIG. 16 illustrates a ball with alignment marks used in photo exposureprocessing.

FIG. 17 illustrates a first mounting system for used with the firstfixed-type photo exposure system of FIG. 15.

FIG. 18 illustrates a second mounting system for used with the firstfixed-type photo exposure system of FIG. 15.

FIG. 19 illustrates a conveyor system used with the second mountingsystem of FIG. 18.

FIG. 20 illustrates a positioner system used with the second mountingsystem of FIG. 18.

FIG. 21 illustrates a pivotal arm system used with the second mountingsystem of FIG. 18.

FIG. 22 illustrates a reflecting-type photo exposure system.

FIG. 23 illustrates a descending-type photo exposure system.

FIG. 24 illustrates a finished version of the ball.

FIG. 25 illustrates many balls mounted to a circuit board.

FIG. 26 illustrates a VLSI circuit made by clustering several balls.

DETAILED DESCRIPTION OF THE INVENTION

Referring to FIG. 1, the reference numeral 100 generally designates amanufacturing system for creating and configuring spherical shapedsemiconductor integrated circuits (“balls”). For the remainder of thedescription, the process will be described with respect to silicon, itbeing understood that any semiconductive material can be used.

Initially, a crystal formation process 110 forms a single sphericalcrystal. Upon formation of the spherical crystal, a fabrication process120 constructs a circuit onto the spherical crystal to form the balls.Once fabricated, a clustering process 130 connects the balls with eachother and other devices, such as a printed circuit board.

I. FORMATION OF GRANULAR POLYCRYSTAL AND A SINGLE SPHERICAL CRYSTAL.

Conventionally, there have been three prevalent methods formanufacturing granular polycrystal semiconductor. One method is to crusha polycrystal rod or ingot. Another method utilizes fluid bed reactionby supplying powder form polycrystal to a fluid bed reactor. A thirdmethod involves melting semiconductor material in an inert gas and“blowing off” or dropping the melted semiconductor. These three methodshave many associated problems. For one, each of the above methods isvery labor intensive, especially as the size of the polycrystalincreases to support larger and larger diameter wafers. As a result,they are all fairly expensive and result in a relatively poor yield ofquality product. In addition, the granules are not uniform in size andweight, particularly with the fluid bed reactor method.

A. A GRANULAR POLYCRYSTAL PROCESSING SYSTEM

Referring to FIG. 2, a return-type repetitive fluid bed reactor furnace200 grows silicon polycrystalline powder 202 into graular polycrystals.The fluid bed reactor furnace 200 uses a fluid bed reaction process,operating at a high temperature over a very short time, to grow thepowder 202 from a crushed silicon ingot or other source. As a result,the fluid bed reactor furnace 200 produces granules that are relativelyuniform in size and weight.

The fluid bed reactor furnace 200 contains a furnace compartment 204, asupporting stand 206, a weight sorter 208 and a plurality of pipesincluding return pipes 210, 212, gas pipes 214, 216, 218, 220, 222,exhaust pipe 224 and material conveyance pipes 226, 228. Attached to thefurnace compartment 204 are heaters 230, 232.

In operation, the silicon polycrystailine powder 202, in powder or sandform, enters the furnace compartment 204 through the material conveyancepipe 226. Simultaneously, a gas such as monosilane SiH4 is infected fromthe bottom of the furnace compartment 204 through gas pipes 218, 220.The powder 202 and the SiH4 mix to form a fluid bed reaction layerinside the furnace compartment 204. The fluid bed reaction layer isheated by heaters 230 and 232.

As the powder 202 is mixing in the furnace compartment 204, it grows insize such that it eventually falls into the weight sorter 208. At theweight sorter 208, rejected granules 234, which are lighter than apredefined weight, are returned to the fluid bed reaction layer throughthe return pipes 210, 212. However, granules 236 meeting the predefinedweight are exported through the material conveyance pipe 228. Also,exhaust gas is discharged through the exhaust pipe 224.

As the granules 236 are exported through the material conveyance pipe228, a carrier gas (not shown) is injected through the gas pipe 222 tohelp carry the granules. In addition, by injecting an appropriate amountof impurity to the carrier gas, the silicon of the granules 236 can bedoped to become n-type or p-type silicon, as desired. Furthermore, byconnecting several fluid bed reactor furnaces 200 in series, thegranules 236 can also be manufactured by a repetitive fluid bed reactionprocess.

B. A SYSTEM FOR MANUFACTURING SMALL GRANULAR SINGLE CRYSTALS

Referring to FIG. 3, a descending-type wafting treatment device 300 isused to manufacture a small granular single crystal. The wafting device300 includes a furnace compartment 302, a supporting stand 304, alanding table 306 and a plurality of pipes including gas pipes 308, 310,an exhaust pipe 312, and material conveyance pipes 314, 316. Attached tothe furnace compartment 302 are several pre-heaters 318, ultra-hightemperature heaters 320, and low temperature heaters 322, therebyforming a preheat zone 324, an ultra-high temperature zone 326, and alow temperature zone 328, respectively, inside the compartment. Theultra-high temperature zone 326 may alternatively, or additionally, beheated by other methods including high-frequency heating, laser beamheating or plasma heating.

In operation, each of the granules 236 (FIG. 2) enters the waftingdevice 300 through the material conveyance pipe 314. The granules 236first enter the preheat zone 324, which has a temperature below themelting point of granular polystal sihcon. The granules 236 then descendthrough an opening 330 into the ultra-high temperature zone 326, whichhas a temperature far above the melting point of silicon. The ultra-hightemperature zone 326 is filled with inert gas (not shown) containingimpurities, which is piped in from gas pipes 308, 310. The impuritiescarried with the inert gas also allow the granules 236 to be dopedn-type or p-type, as required. The granules 236 melt as they descendthrough the ultra-high temperature zone 326, the rate of descent beingcontrolled by the inert gas flowing through the gas pipes 308, 310.

Because each of the granules 236 have melted, they become spherical inshape due to surface tension, and thereby take the form of a granularsingle crystal 340. The granular single crystals 340 continue to descendinto the low temperature zone 328, where they harden. The lowtemperature zone 328 is of sufficient air pressure to assist thegranular single crystals 340 in making a soft landing on the table 306.

It is understood that the direction of flow through the wafting device300 is not essential to the formation of the granular single crystals340. For example, an alternative embodiment is an ascending-type waftingdevice which propels the granular single crystals upwards by theinjected gas. Therefore, for this device, as well as other devicesdescribed below, obvious modifications to direction of flow aretherefore anticipated.

Referring to FIG. 4, although some of the granular single crystals 340may already meet required specifications for diameter and roundness, itmay be necessary to polish one or more of the granular single crystals340 using a granular single crystal spherical surface polishing device400. The polishing device 400 includes an outer pipe 402, an inner pipe404 having a tapered section 406 and an expanded section 408, andmaterial conveyance pipes including a product inlet pipe 410. A distance412 between the inner surface of the outer pipe 402 and the outersurface of the expanded section 408 defines the final diameter of thegranular single crystals 340. The polishing device 400 may be in avertical, horizontal, or diagonal orientation to facilitate thepolishing process.

In operation, the granular single crystals 340 enter the polishingdevice 400 through the inlet pipe 410 and fall into an area 414 definedby the tapered section 406 and the outer pipe 402. The outer pipe 402rotates in one direction while the inner pipe 404, including the taperedsection 406 and expanded section 408, rotates in the opposite direction.Although not shown, the inlet pipe 410 also allows polishing materialsuch as alumina powder and water to be introduced into the area 414. Asa result of the counter rotations of the pipes 402, 404, along with theabrasive affects of the alumina powder and water, the granular singlecrystal 340 is polished into a spherical shape of a desired diameter.

The polishing device 400, due to the polishing and grinding actionsoccurring within, creates a large amount of heat. Therefore, to cool thepolishing device 400, the pipe 402 includes conduits (not shown) toallow a cooling fluid to flow therethrough. Many other devices describedbelow require cooling, it being understood that cooling fluids andalternative methods of cooling are well understood in the art, and willtherefore not be further discussed.

C. SINGLE SPHERICAL CRYSTAL MANUFACTURING

Referring to FIG. 5A, a spiral-type floating treatment device 500 isused to grow a single spherical crystal by epitaxial growth. The spiraldevice 500 includes a furnace section 502, a support stand 504, asoft-landing table 506, and a plurality of pipes, including materialconveyance pipes 508, 510, gas pipes 512, 514, 516, an exhaust pipe 518,and heaters 520, 522. The heaters 520, 522 define zones inside thespiral device 500, including a preheating zone 524 and a hightemperature epitaxial growth zone 526, respectively.

Referring also to FIG. 5B, the material conveyance pipe 508 connects toa float pipe 528 which is a continuous, spiral shaped pipe inside andcoaxial with the gas pipe 512. The float pipe 528 is spot-welded to thegas pipe 512 so that a liquid can flow between the two. In the presentembodiment, the liquid is monosilane gas, mixed with other gases such asargon, hydrogen or helium. For simplicity, the liquid will hereinafterbe referred to as a carrier gas 530. The granular single crystal 340moves through the float pipe 528, while the carrier gas 530 movesthrough the spiral pipe 512. The carrier gas 530 enters the gas pipe512, under pressure, through gas inlet pipes 514, 516, and is exhaustedthrough the gas outlet pipe 518. The float pipe 528 includes a pluralityof very small gas apertures 532 so that the carrier gas 530 can flowtherethrough and support the granular single crystal 340 inside thefloat pipe 528. As a result, the granular single crystal 340 “floats” onthe carrier gas inside the float pipe 528, thereby avoiding directcontact with the float pipe.

In operation, each granular single crystal 340 enters the spiral device500 through the material conveyance pipe 508, which connects to thefloat pipe 528. The granular single crystal 340 then begins to traveldown the float pipe 528, pulled by gravity and floating on the carriergas 530. The granular single crystal 340 moves through the preheatingzone 524 into the epitaxial growth zone 526.

Upon entering the epitaxial growth zone 526, the granular single crystal340 begins to epitaxially grow. Impurity concentration and rate ofepitaxial growth can be controlled by the temperature of the epitaxialgrowth zone 526, as well as impurities injected into the gas pipe 512through the carrier gas 530. Finally, the granular single crystal 340has epitaxdally grown into a nearly perfect sphere, hereinafter referredto as a crystal sphere 540. The crystal sphere 540 then exits the floatpipe 528, lands on the soft-landing table 506, is cooled, and proceedsthrough the material conveyance pipe 510.

Referring to FIG. 6, a movement-type floating treatment device 600 isanother apparatus for epitaxially growing the single spherical crystal340. The movement device 600 includes a furnace section 602, a supportstand 604, heaters 606, and a plurality of pipes, including a materialconveyance pipe 608 connected to a float pipe 610, gas pipes 612, 614,and an exhaust pipe 616. The float pipe 610 and gas pipe 612 operate ina manner similar to the float pipe 528 and the gas pipe 512,respectively, of FIG. 5B. Furthermore, the heaters 606 define zonesinside the movement device 600, including a preheating zone 618, acooling zone 620 and a high temperature epitaxial growth zone 622.

In operation, the granular single crystal 340 enters the movement device600 through the material conveyance pipe 608. The granular singlecrystal 340 then begins to travel down the material conveyance pipe 608,being pulled by gravity and floating on the carrier gas 530 from gaspipe 614. The granular single crystal 340 moves through the preheatingzone 618 into the epitaxial growth zone 622.

Upon entering the epitaxial growth zone 622, the granular single crystal340 begins to epitaxially grow. Impurity concentration and the rate ofepitaxial growth can be controlled by the temperature of the epitaxialgrowth zone 622, the angle of the material conveyance pipe 608, and theimpurities injected into the gas pipe 612 through the carrier gas 530.Finally, the granular single crystal 340 has epitaxially grown into thecrystal sphere 540, similar to that of FIG. 5. The crystal sphere 540then exits the movement device 600 through the material conveyance pipe608.

Because the crystal sphere 540, and all of its predecessors, are small,light and round, the entire manufacturing process described above can beeasily automated. For example, inlet product pipes of one device can bemated with outlet product pipes of a predecessor device. Therefore,because the entire process can be formed out of continuous pipes, theintroduction of contaminants is greatly reduced.

II. FABRICATION OF THE BALL.

Fundamentally, fabrication of a ball includes the same basic processingsteps used by conventional chip or wafer fabrication. Wafer fabricationis implemented by exposing mask patterns to the surface of thesemiconductor wafer and implementing processing or treatment operationsto the wafer surface. The processing or treatment operations can befurther described as: de-ionized water cleaning, developing and wetetching; diffusion, oxidation and deposition of films; coating;exposure; plasma etching, sputtering and ion implantation; ashing; andepitaxial growth.

The fabrication equipment described below may facilitate severaldifferent methods and each of the methods can be used to performdifferent processing operations. For example, a wafting processingtreatment method can be used for cleaning, drying, or making films onthe crystal spheres 540 as they travel therethrough, examples of whichare described below.

Therefore, the fabrication processes and equipment described below arenot listed in any particular sequence. Also, it is understood that manyof the processes will be repeated. Further still, the processesdescribed below are not intended to be exclusive of all the fabricationprocesses, but are intended to illustrate sample processes to provide aclear understanding of the invention. Because the sequence andrepetition of the processes may be different, the crystal sphere 540will, for the following discussion and following figures relating tofabrication, be referred to as a ball 700, even though it goes throughmany changes during fabrication.

A. CLEANING PROCESS

Conventional wafer processing cleans wafers by fixing a lot of wafersonto a-wafer boat and dipping both into large reservoirs of de-ionizedwater. Many problems are associated with this method. For one, the timeand cost of replacing the de-ionized water with fresh water issignificant. Further, the entire process requires large and expensivereservoirs.

Referring to FIG. 7, a descending-type wafting device 702 performs acleaning process on the ball 700. The wafting device 702 includes aprocessing pipe 704 with a product inlet 706, a product outlet 708, ade-ionized water inlet 710, a de-ionized water outlet 712, and a productguide 714.

In operation, the ball 700 enters the product inlet 706 and begins todescend towards the product outlet 708. The rate of descent is affectedby the de-ionized water 716 flowing through the processing pipe 704 andgravitational pull on the ball. The de-ionized water 716 is flowing in adirection opposite to that of the descending ball 700. Before theproduct guide 714 directs the ball 700 to the product outlet 708, the“freshest” de-ionized water is being used to clean the ball.

Referring to FIG. 8, an ascending-type wafting device 800 may also beused to clean the ball 700. The wafting device 800 includes a processingpipe 802 with a product inlet 804, a product outlet 806, a de-ionizedwater inlet 808, a de-ionized water outlet 810, and a product guide 812.

In operation, the ball 700 enters the product inlet 804 and begins toascend towards the product outlet 806. The rate of ascension is affectedby the de-ionized water 814 flowing through the processing pipe 802 andgravitational pull on the ball; the flow rate of the de-ionized waterbeing greater than that of the ball. The de-ionized water 814 is flowingin the same direction as the ascending ball 700. The product guide 812directs the ball 700 from the product inlet 804 to the product outlet806.

As a result, both the ascending-type and descending-type wafting devices800, 702 clean the ball 700 without the use of conventional de-ionizedwater tanks, support a steady flow of balls, and are relatively small insize. In addition, the ball 700 remains in a hermetically sealedenvironment, and therefore is less likely to become contaminated.Furthermore, the ascending-type and descending-type wafting devices 800,702 can be combined, such as by the connecting product outlet 806 to theproduct inlet 706, to better facilitate cleaning. Such combination ofdevices can be similarly implemented in the remaining process steps tobetter facilitate the respective process.

B. WET-ETCHING

Conventional wet etching is similar to conventional cleaning processes,and has similar problems. For one, wet etching typically requires largetanks of chemicals for performing the etching process. In addition, oncewafers have been removed from the tanks, the wafers are suspect tocontamination by being exposed to surrounding air. In contrast, the twoabove described wafting devices (FIGS. 7, 8) may also be used for thewet-etching process. The operation of the wafting devices is the same asdescribed with reference FIGS. 7, 8, except instead of de-ionized water,etching chemical is use. As a result, the wet etching process enjoys thesame benefits as described above with the cleaning process.

C. DIFFUSION

Conventionally, the maximum temperature for diffusion of impurities intoa wafer is limited to about 1200° C. because of the tendency of thewafer to warp. As a result, impurity diffusion takes tens of hours tocomplete. In contrast, because of the spherical shape of the ball 700,warpage is less of a concern, the diffusion temperature can besignificantly higher and the processing speed becomes much quicker.

Referring to FIG. 9, a descending-type diffusion furnace 900 performs adiffusion process on the ball 700. The diffusion furnace 900 includes afurnace compartment 902, a supporting stand 904, a landing table 906 anda plurality of pipes including gas pipes 908, 910, an exhaust pipe 912,and material conveyance pipes 914, 916. Attached to the furnacecompartment 902 are pre-heaters 918, ultra-high temperature heaters 920,and low temperature heaters 922, thereby forming a preheat zone 924, anultra-high temperature zone 926, and a low temperature zone 928,respectively. The ultra-high temperature zone 920 may alternatively, oradditionally, be heated by other methods including high-frequencyheating, laser beam heating or plasma heating.

In operation, the ball 700 enters the diffusion furnace 900 through theproduct inlet pipe 914. The ball 700 first moves through the preheatzone 924, which has a temperature below the melting point of silicon.The ball 700 then descends through an opening 930 into the ultra-hightemperature zone 926, which has a temperature far above the meltingpoint of silicon. The ultra-high temperature zone 926 is filled with gas(not shown) containing impurities, which is piped in from gas pipes 908,910. As the ball 700 passes through the ultra-high temperature zone 926,it diffuses instantly by having its surface melt and diffuse with theimpurities in the gas. The gas also reduces the rate of descent of thefalling ball 700. The ball 700 then enters the low temperature zone 928where its surface re-crystallizes and the rate of descent is greatlyreduced until it lands on the table 906.

D. OXIDATION

Conventional oxidation of silicon wafers has several problems. For one,oxidation is typically done to many wafers at a time. As a result, theoxidation film from wafer to wafer, as well as the film on each wafer,is subject to variability. In addition, oxidation takes a long time dueto the warping tendencies discussed above with reference to diffusion.In contrast, the above described diffusion furnace 900 (FIG. 9) may alsobe used to perform the oxidation process. The operation for oxidation isthe same as for diffusion, except instead of impurity laden gas, oxygenis used. As a result, the oxidation process enjoys the same benefits asdescribed above with reference to the diffusion process. In addition,the ball 700 remains in a hermetically sealed environment, and thereforeis less likely to become contaminated.

E. SPUTTERING, DEPOSITION AND DRY ETCHING

Referring to FIG. 10, a descending-type plasma device 1000 performs aprocess for sputtering of metals, deposition of various films, and a dryetching, collectively referred to as a plasma process, on the ball 700.The plasma device 1000 includes a processing pipe 1002 with a productinlet 1004, a product outlet 1006, a gas inlet 1008, and a gas outlet1010. The gas inlet 1008 forms a product guide 1012 and a productsoft-landing pipe 1014 having a plurality of apertures for gas (notshown) to flow through. The plasma device 1000 also includes positiveand negative electrodes 1016, 1018, respectively, a radio frequency(“RF”) power supply 1020 and a main power supply 1022. The electrodes1016, 1018 line the interior of the pipe 1002 and thereby form an plasmazone 1024. It is understood, however, that the electrodes 1016, 1018 mayalso represent metal plates or radio-frequency coils placed on theexterior of the pipe 1002. Furthermore, the plasma device 1000 includesa preheater 1026 which defines a preheat zone 1028.

In operation, the ball 700 enters the product inlet 1004 and begins todescend towards the product outlet 1006. The ball 700 first enters thepreheat zone 1028. The ball then descends into the plasma zone 1024 andis processed and treated as it moves therethrough. Gas is injected fromthe pipe 1008 through apertures 1030 for processing the ball 700 and forcontrolling the ball's rate of descent. It is understood that differentgases, RF frequency, and power are utilized for different processes in amanner well understood in the art.

F. COATING

Coating is used for several processes. For one, coating is used forapplying photo resist. Also, coating is used to apply a colored paintfor protecting and labeling the finished ball.

Referring to FIG. 11, a descending-type coating device 1100 performs acoating process on the ball 700. The coating device 1100 includes aprocessing pipe 1102 with a product inlet 1104, a product outlet 1106, agas inlet 1108, and a gas outlet 1110. The gas inlet 1108 also forms aproduct guide 1112 and a product soft-landing pipe 1114 having aplurality of apertures 1115 for gas to flow through The coating device1100 also includes preheater coils 1116, heater coils 1118, and sprayers1120, 1122, 1124, 1126. The coils 1116, 1118 line the exterior of thepipe 1102 and thereby form a preheat zone 1128 and a drying zone 1130,respectively. The sprayers 1120, 1122, 1124, 1126 are accessible to theinterior of the pipe 1102 and thereby form a coating zone 1132.

In operation, the ball 700 enters the product inlet 1104 and begins todescend towards the product outlet 1106. The ball 700 first enters thepreheat zone 1128. The ball 700 then descends into the coating zone1132. The sprayers eject a fine haze of coating material on the ball700. The ball 700 then enters the drying zone 1130. Gas, injectedthrough the pipe 1108, facilitates drying as well as controls the rateof descent of the ball 700. The ball then enters the soft-landing pipe1114 where the apertures 1115 direct the gas against the ball.Furthermore, the gas forces the haze of coating material back up towardsthe exhaust pipe 1110. The gas from the apertures 1134 can also spin theball 700 to better facilitate coating and drying.

Referring to FIG. 12, a descending-type gas-coating device 1200 alsoperforms a coating process on the ball 700. The coating device 1200includes a processing pipe 1202 with a product inlet 1204, a productoutlet 1206, a gas inlet 1208, and a gas outlet 1210. The gas inlet 1208also forms a product guide 1212 and a product soft-landing pipe 1214having a plurality of apertures 1215 for gas to flow through. Thecoating device 1200 also includes preheater coils 1216, heater coils1218, and gas sprayers 1220, 1222, 1224, 1226. The coils 1216, 1218 linethe exterior of the pipe 1202 and thereby form a preheat zone 1228 and adrying zone 1230, respectively. The gas sprayers 1220, 1222, 1224, 1226are accessible to the interior of the pipe 1202 and thereby form apolymerization zone 1232. The coating device 1200 also includes a RFpower supply 1230 and a main power supply 1232.

In operation, the ball 700 enters the product inlet 1204 and begins todescend towards the product outlet 1206. The ball 700 first enters thepreheat zone 1228. The ball 700 then descends into the polymerizationzone 1232. The sprayers 1220 and 1226 eject a first monomer gas and thesprayers 1222 and 1224 eject a second monomer gas. The first and secondmonomer gases combine to form a photo sensitive polymer gas such aspolymethyl-meta-acrylate (not shown). Reaction in the polymerizationzone 1232 is facilitated by the heating energy from the RF power supply1230 and the main power supply 1232. As a result, a very thinphoto-sensitive film can be attained on the ball 700 without using anyliquid-form photo resist. The ball 700 then enters the soft-landing pipe1214 where the apertures 1215 direct inert gas against the ball. Theinert gas also forces the polymer gas up towards the exhaust pipe 1210.

G. PHOTO EXPOSURE

Conventionally, wafers are placed on a flat surface where they receivephoto processing to place circuit configurations on a top surface of thewafer. In contrast, the ball 700 receives photo processing across almostits entire surface. As a result, a larger surface area is available toreceive the circuit configurations. For example, considering threestructures: a square-device, a round disk device, and a sphericaldevice, each having a same radius “r”, it is readily apparent that thesurface area of each device is defined as 4r², πr², and 4πr²,respectively. Therefore, the spherical device has the greatest surfacearea available to support the circuit configurations.

There are several methods for performing photo exposure onto the ball700, including a fixed-type, a reflecting-type, a descending-type and anascending-type exposure system.

Referring to FIG. 13, some photo exposure methods utilize a sphericalshaped mask 1300. The mask 1300 includes a transparent spherical surface1302 having a top opening 1304 and a bottom opening 1306. Once a layoutdrawing of the circuit configuration (not shown) has been prepared,using conventional layout techniques although slightly modified tosupport the spherical surface 1302, the layout drawings are applied tothe spherical surface using conventional techniques such as electronbeam, x-ray, spherical surface plotter, or laser beam. The layoutdrawings may be applied to either the inside or outside of the surface1302, and the surface may also be cut in half to facilitate suchapplication.

Referring to FIG. 14, some photo exposure methods also utilize a slitdrum 1400. The slit drum 1400 includes an opaque spherical surface 1402having a top opening 1404, a bottom opening 1406, and a slit opening1408.

Referring to FIGS. 13-15, a fixed-type exposure system 1500 performsphoto exposure onto the ball 700. The exposure system 1500 fixes themask 1300 in a stationary position. Surrounding the mask 1300 is theslit drum 1400 and surrounding the slit drum is a light system 1502. Thelight system 1502 is capable of projecting light across the entire slitdrum 1400. The light system 1502 includes a top opening 1504 whichaligns with the top openings 1304, 1404 of the mask and drum,respectively, and a bottom opening 1506 which aligns with the bottomopenings 1306, 1406 of the mask and drum, respectively. The ball 700 ispositioned at the center of the mask 1300 by a support stand 1508.

In operation, the light system 1502 radiates light through the slitopening 1408, through a corresponding portion of the mask 1300, and ontoa corresponding portion of the ball 700. The masked light then reactswith photo-resist on the ball 700 to form the desired circuitconfigurations. The slit drum 1400 then rotates, thereby exposing theentire surface of the ball 700 to the mask 1300. Alternatively, the slitdrum 1400 may be located inside the mask 1300, or may not be used atall.

Referring also to FIG. 16, the support stand 1508 has three supportprongs 1600, 1602, 1604. The support prongs 1600, 1602, 1604 meet withalignment marks 1606, 1608, 1610, respectively, on the ball 700. Thealignment marks 1606, 1608, 1610 are not equally spaced apart so thatonly one configuration of the ball 700 allows the marks to correctlyjoin with the support prongs 1600, 1602, 1604. As a result, the ball 700can be placed in a predetermined position for photo processing.

The alignment marks 1606, 1608, 1610 can be made a number of ways. Forone, the alignment marks 1606, 1608, 1610 can be formed as indentationsby a separate process (not shown). For another, the alignment marks1606, 1608, 1610 can be randomly selected for the first photo processingoperation since initially it may be unimportant as to the location ofthe alignment marks. The first photo processing operation will thendefine the alignment marks for subsequent operations.

Once the support prongs 1600, 1602, 1604 contact with the alignmentmarks 1606, 1608, 1610, respectively, the weight of the ball 700 securesthe ball to the prongs. In addition, the support prongs 1600, 1602, 1604may be further secured with the alignment marks 1606, 1608, 1610 byvacuum suction. In either case, the support stand 1508 is used to placethe ball at the central point of the mask 1300 during processing.Although not shown, the support stand 1508 can also support the ball 700while it is being coated with photo resist.

Referring to FIG. 17, the reference numeral 1700 designates a system forplacing the ball 700 onto the support stand 1508. One or more balls 700are first placed in a vibration chamber 1702. The vibration chamber 1702uses an air pipe 1704 to vibrate and rotate one of the balls 700 untilthe alignment marks 1606, 1608, 1610 are in a position to join with thesupport prongs 1600, 1602, 1604. Such determination can be made by acamera 1706. Once the alignment marks 1606, 1608, 1610 are in position,the support stand 1508 moves to join the support prongs with thealignment marks. The stand 1508 then carries the ball 700 to thefixed-type exposure system 1500.

Referring to FIG. 18, the reference numeral 1800 designates anothersystem used for placing the ball 700 onto the support stand 1508. Theplacement system 1800 includes two pivotal arm systems 1802, 1804, twoconveyor systems 1806, 1808, a photo alignment system 1810, and acomputing device 1812.

Referring also to FIG. 19, in operation, the ball 700 enters theplacement system 1800 on the conveyor 1806. The conveyor 1806 hasseveral rubber cups 1900 on which the ball 700 may ride. In addition,the rubber cups 1900 have several vacuum ports 1902 to secure the ball700 thereto.

Referring also to FIG. 20, the first pivotal arm 1802 removes the ball700 from the conveyor 1806. The first pivotal arm 1802 contains acontrollable positioning system 2000, a vertical arm 2002, a horizontalarm 2004, and a positioner 2006. The positioning system 2000 iscontrolled by the computer 1812, as discussed in greater detail below.The positioning system 2000 rotates the vertical arm 2002 about alongitudinal axis 2008 as well as raises and lowers the vertical arm ina horizontal direction 2010. The horizontal arm 2004 is fixed to thevertical arm 2002. Both arms 2002, 2004 include vacuum and control linesfor use by the positioner 2006. The positioner can move in manydifferent directions 2012, and includes a vacuum cup 2014 forselectively engaging and disengaging with the ball 700.

Referring also to FIG. 18, the computer 1812 instructs the first pivotalarm 1802 to remove the ball 700 from the conveyor 1806 and place it infront of the photo alignment system 1810. The photo alignment system1810 communicates with the computer 1812 to find the alignment marks1606, 1608, 1610 (FIG. 16). The computer 1812 then adjusts the positionof the ball 700 by manipulating the first positioner 2006 to a desiredposition. If the desired position is attained, as determined by thephoto alignment system 1810, the first pivotal arm 1802 rotates to placethe ball 700 to be accessed by the second pivotal arm 1804. If thedesired position can not be attained, the first pivotal arm 1802 rotatesto place the ball 700 on the second conveyor 1808. The second conveyor1808 then returns the ball 700 to the first conveyor 1806.

Referring to FIGS. 18 and 21, the support stand 1508 is placed in andcontrolled by a pneumatic device 2100 of the second pivotal arm 1804.The pneumatic device 2100, which is used to raise and lower the supportstand 1508, is also attached to a gear system 2102, all of which arecontrolled by the computer 1812. The second pivotal arm 1804 rotatesabout a longitudinal axis 2104 to place the ball in one of threepositions P1, P2, P3. In position P1, the pneumatic device 2100 raisesthe support stand to engage with the ball 700 at the appropriatealignment marks. The pneumatic device 2100 then lowers the support stand1508. In position P2, the pneumatic device 2100 is in position for thephoto system 1500. The pneumatic device 2100 then raises the supportstand 1508 to position the ball 700 for photo processing, as describedabove. Once complete, the support stand 1508 lowers, the second pivotalarm 1804 rotates to the position P3, and the gear system 2102 causes theball 700 to be off-loaded for the next process step.

Referring to FIG. 22, alternatively, a reflecting-type exposure system2200 may perform photo exposure onto the ball 700. The reflecting-typeexposure system uses a flat mask 2202, two lenses 2204, 2206, and twomirrors 2208, 2210. In operation, a light source 2212 emits lightthrough the flat, quartz reticle, mask 2202. A circuit drawn on the mask2202 is then projected toward the ball 700. A first portion 2214 of thecircuit is projected through the lenses 2204, reflected off the mirror2210 and onto one face of the ball 700. A second portion 2216 of thecircuit drawing is reflected off the mirror 2208, projected through thelenses 2206, and onto a second portion of the ball 700. As a result, aspherical circuit can be produced from a flat mask 2202.

Referring to FIGS. 13 and 23, in another alternative embodiment, adescending-type exposure system 2300 may perform photo exposure onto theball 700. The descending-type exposure system 2300 requires the threealignment marks 1606, 1608, 1610 (FIG. 16), but does not affix the ballonto the support stand 1508. In addition, the descending-type exposuresystem 2300 does not use the slit drum 1400 (FIG. 14). Instead, thedescending-type exposure system 2300 includes several high speed, highresolution cameras such as cameras 2302, 2304, 2306 located above theopening 1304 of the mask 1300. As the ball 700 falls past points 2308,2310, 2312, the cameras 2302, 2304, 2306 report the position of the ball700, and its orientation, to a computing device 2314. The computingdevice then predicts when the ball 700 will reach the central point ofthe mask 1300 and activates the photo system 1502 at the exact righttime. In addition, the computing device 2314 also instructs apositioning device (not shown) to rotate and move the mask 1300 toaccommodate the orientation of the ball 700.

Although not shown, additional embodiments are inherent from the abovementioned embodiments. For example, an ascending-type exposure system issimilar to the descending-type except that a forced gas causes the ball700 to move upward past several lower-mounted cameras, to the centralpoint of the mask 1300, and out the opening 1304. In addition, a secondfixed-type exposure system behaves similarly to the exposure system ofFIG. 15 except that the support stand 1508, utilizing vacuum suction,enters the mask 1300 from the top opening 1304 for exposure, and thenreleases it to exit through the bottom opening 1306.

H. COATING AND LEADS

Referring to FIG. 24, the ball 700 is coated with a protective paint2500. The paint 2500 is also colored for the purpose of productdistinction. Once the paint 2500 has been applied, leads 2502 are addedto the ball 700. The leads can be applied by removing the colored paint2500 from pads (not shown) on the ball, or the pads can be protectedduring the paint process to prevent any paint from being appliedthereto. Solder balls, or reflow solder, are then physically andelectrically attached to the pads. The solder balls serve as leads forconnecting the ball to other devices, as discussed in greater detailbelow.

III. CLUSTERING ONE OR MORE BALLS.

Referring to FIG. 25, several different balls 2500, 2502, 2504, 2506,2508, 2510, 2512 are shown. As a finished product, the balls 2500-2512have solder bumps arranged at predefined intervals throughout theirsurface. As a result, the balls 2500-2508 can be easily mounted to acircuit board 2514, a bottom portion of each ball resting directly onthe circuit board. The ball 2500 has solder bumps 2516 arranged in arelatively small circle so that the ball 2500 can be mounted to the flatcircuit board 2514. The balls 2502, 2504 each have a first set of solderbumps 2518, 2520, respectively, for mounting to the circuit board 2514and a second set of solder bumps 2522, 2524, respectively, forconnecting to each other. The ball 2506 has many solder bumps 2526. Toelectrically connect each solder bump 2526 to the circuit board 2514,the ball 2506 is placed into a socket 2528. The socket 2528 has pads2530 that align with the solder bumps 2526 and electrical connections2532 on a bottom surface for connecting the pads to the circuit board2514. The ball 2508 has solder bumps 2534, 2536; the ball 2510 hassolder bumps 2538, 2540; and the ball 2512 has solder bumps 2542 so thatthe balls may connect to the board and to each other, as shown.

Referring to FIG. 26, multiple balls, designated generally by referencednumeral 2600, are clustered together and to a circuit board 2602.Several advantages are obtained from the clustering. By clustering theballs 2600 in different directions based on structural designing, theyform a very large scale integrated (“VLSI”) circuit which may beassembled onto very complicated surfaces. For example, the VLSI circuit2600 may be constructed inside a pipe or on an uneven surface. Inaddition, the distance between the balls is greatly reduced, therebyenhancing the overall operation of the VLSI circuit 2600.

IV. DISCRETE COMPONENTS.

By using a spherical single crystal as a base material formanufacturing, spherical discrete semiconductor devices can be made.Examples of such discrete semiconductor devices includes registers,capacitors, inductors, and transistors.

For example, in conventional chip manufacturing, it is impossible to addany significant inductance to the chip. Although coils can be made onthe chip, very little material can be located between the coils due tothe relatively flat nature of the chip. As a result, the linkage for theinductor is very low. In contrast, the ball can be manufactured to aspecific inductance in several ways. For one, simple sphericalinductance is made by processing metal paths, or coils, around the ball.Because the core of the ball provides a significant amount of materialbetween the coils, the linkage for the inductor can be significant.Furthermore, additional inductors can be added by adding additionalmetal layers.

Utilizing such inductance, several balls can be clustered to create asemiconductor antenna for sending and receiving radio frequency signals.In addition, an inductor-resistor oscillator can be easily produced.

V. CONCLUSION

The above described manufacturing system provides many advantages overconventional wafer and chip manufacturing and processes in addition tothose stated above.

One advantage is that the entire process is extremely clean, and sufferslittle product loss due to contamination. Furthermore, most of theequipment can be hermetically sealed and interconnected by using acontinuous pipe or tube. As a result, no clean room is required andthere is no handling of the silicon product.

Another advantage is that most of the equipment can be interconnected byusing a continuous pipe or tube. The use of pipes readily facilitatesefficient “pipeline production”, thereby reducing cycle time.Furthermore, individual crystal spheres are round and light, and cantherefore easily float on a bed of liquids, also improving theproduction efficiency.

Another advantage is that no conventional. packaging is required becausethe form is spherical and therefore no edges exist which are subject tobreakage.

Another advantage is the low cost in constructing the polycrystal andsingle crystal when producing a spherical crystal.

Another advantage is the low cost in the diffusion, oxidation and otherfabrication processes.

Another advantage is that manufacturing polycrystal and a single crystalcan be extremely simplified and the yield for the single crystal isdramatically improved.

Another advantage is that the oxygen content in a single crystal is verylow.

Another advantage is that there is no significant yield decrease due towarpage or varying wafer thickness as in conventional chip processing.

Another advantage is that clustering enables multi-layer metal wiring,multi-active layers, unique layout configurations for a VLSI circuit.Also, the necessity for multi-layer printed circuit board is reduced.

Another advantage is that conventional packaging activities, such assawing, mounting, wire bonding, and molding, becomes unnecessary.

Another advantage is that compared to the area on a printed circuitboard required by conventional chips, the ball requires much less area.

Another advantage is that machinery for production remains relativelysmall.

Although illustrative embodiments of the present invention have beenshown and described, a latitude of modification, change and substitutionis intended in the foregoing disclosure, and in certain instances, somefeatures of the invention will be employed without a corresponding useof other features. For example, additional or alternative processes andother ball configurations may be added without altering the scope of theinvention. Accordingly, it is appropriate that the appended claims beconstrued broadly and in a manner consistent with the scope of theinvention.

What is claimed is:
 1. A method for processing a sequence of sphericalshaped semiconductor devices comprising the steps of performing a firstprocessing operation on the devices while the devices sequentially movethrough a processing chamber without physical contact with the chamber,the sequence of the devices being maintained through the processingchamber, transferring each device through a pipe in the same sequenceafter the first processing operation has been performed on that device,and performing a second processing operation on the transferred devicesin the same sequence.
 2. The method of claim 1 further comprising thestep of floating the spherical shaped semiconductor devices in either avacuum or a liquid during the transferring step.
 3. The method of claim1 wherein the step of transferring moves the semiconductor deviceswithout the devices contacting each other.
 4. The method of claim 1wherein the first processing operation includes providing a firstprocessing fluid and the second processing operation includes providinga second processing fluid, the second processing fluid being differentfrom the first.
 5. The method of claim 1 wherein the steps of performingthe first processing operation, transferring, and performing the secondprocessing operation are all performed while the devices are continuallymoving.
 6. The method of claim 3 wherein the step of transferring doesnot perform any processing on the devices.
 7. The method of claim 1wherein the first and second processing operations are performed atdifferent temperatures.
 8. A method for processing a sequence ofthree-dimensional devices comprising the steps of allowing the devicesto move from an inlet in a continuous process, both of a first chamber,processing the devices while moving there through, transferring eachdevice to a second chamber, and performing a second processing operationon the transferred devices.
 9. The method of claim 8 wherein the devicesmove in a single direction as they fall through the first chamber. 10.The method of claim 8 wherein the step of performing a second processingoperation includes allowing the devices to fall from an inlet to anoutlet, both of the second chamber and providing a second processingfluid to the second chamber so that the devices are processed whilefalling there through.
 11. A method for processing a sequence ofthree-dimensional devices comprising the steps of providing thethree-dimensional devices to a first chamber in a continuous process,providing a processing fluid to the first chamber so that the devicesare processed, transferring each device to a second chamber, andperforming a second processing operation on the transferred devices. 12.The method of claim 11 wherein each of the sequence of devices movesalong a common path through the first chamber.